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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

Author
HUANG, Li-Hsien1 ; YEH, Shu-Hao2 ; LEE, Ching-Ting1 ; HAIPENG TANG3 ; BARDWELL, Jennifer3 ; WEBB, James B3
[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Province of China
[2] Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Province of China
[3] Institute for Microstructural Sciences, National Research Council, Ottawa, ON K1A 0R6, Canada
Source

IEEE electron device letters. 2008, Vol 29, Num 4, pp 284-286, 3 p ; ref : 10 ref

CODEN
EDLEDZ
ISSN
0741-3106
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
MOS-HEMTs interface-state density photoelectrochemical (PEC) oxidation method β-Ga2O3 and α-Al2O3 crystalline phases
Keyword (fr)
Capacité électrique Couche oxyde Courant fuite Courant grille Densité état Diélectrique Etat interface Oxydation Recuit Seuil tension Structure MOS Transistor mobilité électron élevée
Keyword (en)
Capacitance Oxide layer Leakage current Gate current Density of states Dielectric materials Interface state Oxidation Annealing Voltage threshold MOS structure High electron mobility transistor
Keyword (es)
Capacitancia Capa óxido Corriente escape Corriente rejilla Densidad estado Dieléctrico Estado interfase Oxidación Recocido Umbral tensión Estructura MOS Transistor movibilidad elevada electrones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20192061

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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