ASIC design flow considering lithography-induced effects : Design for Manufacturability
- Author
- CAO, K1 ; HU, J1
[1] Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, United States - Source
IET circuits, devices & systems (Print). 2008, Vol 2, Num 1, pp 23-29, 7 p ; ref : 8 ref
- ISSN
- 1751-858X
- Scientific domain
- Electronics
- Publisher
- Institution of Engineering and Technology, Stevenage
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit VLSI Circuit intégré puissance Circuit intégré Circuit à la demande Evaluation performance Fabrication microélectronique Implémentation Interférence optique Lithographie Polycristal Processus stochastique Table conversion Technologie BEOL
- Keyword (en)
- VLSI circuit Power integrated circuits Integrated circuit Custom circuit Performance evaluation Microelectronic fabrication Implementation Optical interference Lithography Polycrystal Stochastic process Look up table Back end of line technology
- Keyword (es)
- Circuito VLSI Circuito integrado Circuito integrato personalizado Evaluación prestación Fabricación microeléctrica Implementación Interferencia óptica Litografía Policristal Proceso estocástico Tabla de consulta
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20192264
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/iet-cds:20070112 
https://dx.doi.org/10.1049/iet-cds:20070112
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