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Al-induced reduction of the oxygen diffusion in HfO2 : an ab initio study

Author
HOU, Z. F1 ; GONG, X. G1 ; QUAN LI2
[1] Surface Physics Laboratory and Department of Physics, Fudan University, Shanghai 200433, China
[2] Department of Physics, The Chinese University of Hong Kong, Shatin, New Territory, Hong-Kong
Source

Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 13 ; 135206.1-135206.5 ; ref : 32 ref

CODEN
JCOMEL
ISSN
0953-8984
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Addition aluminium Addition oxygène Barrière diffusion Calcul ab initio Energie totale Hétérodiffusion Impureté interstitielle Méthode fonctionnelle densité Oxyde d'hafnium Structure électronique Valence HfO2
Keyword (en)
Aluminium additions Oxygen additions Diffusion barriers Ab initio calculations Total energy Impurity diffusion Interstitial impurities Density functional method Hafnium oxide Electronic structure Valence
Keyword (es)
Heterodifusión Impureza intersticial Hafnio óxido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30J Diffusion of impurities

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20207283

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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