Strained CMOS Devices With Shallow-Trench-Isolation Stress Buffer Layers
- Author
- YIMING LI1 ; CHEN, Hung-Ming2 ; YU, Shao-Ming3 ; HWANG, Jiunn-Ren2 ; YANG, Fu-Liang2
[1] Department of Communication Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Province of China
[2] Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu 300, Taiwan, Province of China
[3] Department of Computer Science, National Chiao Tung University, Hsinchu 300, Taiwan, Province of China - Source
I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 4, pp 1085-1089, 5 p ; ref : 9 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- -Channel surface buffer layer MOS devices fabrication measurement mobility shallow-trench isolation (STI) sidewall stress buffer layer simulation transport characteristics
- Keyword (fr)
- Contrainte compression Couche superficielle Couche tampon Endommagement Gain courant Relaxation contrainte Semiconducteur type n Semiconducteur type p Structure MOS Technologie MOS complémentaire Technologie NMOS Technologie PMOS Technologie isolation Technologie tranchée
- Keyword (en)
- Compressive stress Surface layer Buffer layer Damaging Current gain Stress relaxation n type semiconductor p type semiconductor MOS structure Complementary MOS technology NMOS technology PMOS technology Insulation technology Trench technology
- Keyword (es)
- Tensión compresión Capa superficial Capa tampón Deterioración Ganancia corriente Relajación tensión Semiconductor tipo n Semiconductor tipo p Estructura MOS Tecnología MOS complementario Tecnología NMOS Tecnología PMOS Tecnología aislamiento Tecnología trinchera
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20214704
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2008.916708 
https://dx.doi.org/10.1109/TED.2008.916708
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