Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method : RECENT ADVANCEMENTS IN SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Author
- WAGNER, B. P1 ; SINGH, N. B1 ; BERGHMANS, A1 ; KNUTESON, D. J1 ; KAHLER, D1 ; MCLAUGHLIN, S1 ; HAWKINS, J1 ; GOLOMBECK, J1
[1] AMSDTC, ATL-3B10, Northrop Grumman Corporation, ES, 1212 Winterson Road, Linthicum, MD 21090, United States - Conference name
- Recent Developments in Selmiconductor, Electro Optic and Radio Frequency Materials and Metrologies for Advanced Materials and Devices. Symposium (Orlando, FL 2007-02)
- Source
Journal of electronic materials. 2008, Vol 37, Num 4, pp 379-383, 5 p ; ref : 8 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Author keyword
- AFM PVT SiC morphology
- Keyword (fr)
- Carbure de silicium Couche épaisse Diagramme rotation Diffraction RX Défaut croissance Face cristalline Grossissement grain Homoépitaxie Microscopie force atomique Microscopie électronique balayage Microstructure Morphologie surface Mécanisme croissance Méthode PVT Propriété mécanique Réseau hexagonal Réseau réciproque Structure cristalline 6110N 6855A 6855J 8115C SiC Substrat Si Substrat SiC
- Keyword (en)
- Silicon carbide Thick films Rocking curve XRD Growth defect Crystal faces Grain coarsening Homoepitaxy Atomic force microscopy Scanning electron microscopy Microstructure Surface morphology Growth mechanism Physical vapor transport method Mechanical properties Hexagonal lattices Reciprocal lattice Crystal structure
- Keyword (es)
- Silicio carburo Diagrama rotación Defecto crecimiento Engruesamiento grano Homoepitaxia Mecanismo crecimiento Método PVT Red recíproca
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20223689
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-007-0364-5 
https://dx.doi.org/10.1007/s11664-007-0364-5
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