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A study on the chemical mechanical polishing of oxide film using a zirconia (ZrO2)-mixed abrasive slurry (MAS)

Author
PARK, Sung-Woo1 ; SEO, Yong-Jin2 ; LEE, Woo-Sun3
[1] Research Institute of Energy Resources Technology, Chosun University, Gwangju 501-759, Korea, Republic of
[2] Department of Electrical Engineering, Daebul University, Chonnam 526-702, Korea, Republic of
[3] Department of Electrical Engineering, Chosun University, Gwangju 501-759, Korea, Republic of
Source

Microelectronic engineering. 2008, Vol 85, Num 4, pp 682-688, 7 p ; ref : 26 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Chemical mechanical polishing (CMP) Diluted silica slurry (DSS) Mixed abrasive slurry (MAS) Zirconia (ZiO2)
Keyword (fr)
Dimension particule Distribution concentration Evaluation performance Fabrication microélectronique Polissage mécanochimique Structure surface Vitesse usure
Keyword (en)
Particle size Concentration distribution Performance evaluation Microelectronic fabrication Chemical mechanical polishing Surface structure Wear rate
Keyword (es)
Dimensión partícula Distribución concentración Evaluación prestación Fabricación microeléctrica Estructura superficie Velocidad desgaste
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20245640

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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