Electrodeposition of tin : a simple approach
- Author
- ANQIANG HE1 ; QI LIU1 ; IVEY, Douglas G1
[1] Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB, T6G 2G6, Canada - Source
Journal of materials science. Materials in electronics. 2008, Vol 19, Num 6, pp 553-562, 10 p ; ref : 34 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Chlorure d'étain Densité courant Dépôt électrolytique Fabrication microélectronique Température ambiante 8115P SnCl2
- Keyword (en)
- Tin chloride Current density Electrodeposition Microelectronic fabrication Room temperature
- Keyword (es)
- Estaño cloruro Densidad corriente Depósito electrolítico Fabricación microeléctrica Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15P Electrodeposition, electroplating
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20253970
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-007-9385-3 
https://dx.doi.org/10.1007/s10854-007-9385-3
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