Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap
- Author
- XIN SUN1 ; QIANG LU2 ; MOROZ, Victor2 ; TAKEUCHI, Hideki3 ; GEBARA, Gabriel3 ; WETZEL, Jeffrey3 ; IKEDA, Shuji3 ; SHIN, Changhwan1 ; TSU-JAE KING LIU1
[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, United States
[2] Synopsys, Inc, Mountain View, CA 94043, United States
[3] Advanced Technology Development Facility, Austin, TX 78741, United States - Source
IEEE electron device letters. 2008, Vol 29, Num 5, pp 491-493, 3 p ; ref : 20 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- MOSFET multi-gate FET scalability variability
- Keyword (fr)
- Commande tension Diminution coût Evaluation performance Extensibilité Rapport aspect Seuil tension Technologie MOS complémentaire Technologie planaire Transistor MOSFET Transistor effet champ Transistor multigrille
- Keyword (en)
- Voltage control Cost lowering Performance evaluation Scalability Aspect ratio Voltage threshold Complementary MOS technology Planar technology MOSFET Field effect transistor Multiple gate transistor
- Keyword (es)
- Control tensión Reducción costes Evaluación prestación Estensibilidad Relación dimensional Umbral tensión Tecnología MOS complementario Tecnología planar Transistor efecto campo Transistor de rejilla múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20290939
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2008.919795 
https://dx.doi.org/10.1109/LED.2008.919795
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