Morphology, electrical and optical properties of undoped ZnO layers deposited on silicon substrates by PEMOCVD
- Author
- KHRANOVSKYY, V1 2 ; ULYASHIN, A2 ; LASHKAREV, G1 ; SVENSSON, B. G2 ; YAKIMOVA, R3
[1] Institute for Problems of Material Science, Krzhyzhanovskyy str. 3, 03680, Kiev, Ukraine
[2] University of Oslo, Physics Department and Centre for Materials Science and Nanotechnology, 0316 Oslo, Norway
[3] Linkoping University, Department of Physics, Chemistry and Biology, 58183 Linkoping, Sweden - Conference title
- Proceedings of Symposium R on Advances in Transparent Electronics: From Materials to Devices. EMRS 2006 Conference, Nice, France
- Conference name
- Advances in Transparent Electronics: from materials to devices I. Symposium R (Nice 2006-05-29)
- Author (monograph)
- FORTUNATO, Elvira (Editor)1 ; HOSONO, Hideo (Editor)1 ; GRANQVIST, Claes (Editor)1 ; WAGER, John (Editor)1
[1] CENIMAT, FCT-UNL, Campus de Caparica, 2829-516 Caparica, Portugal - Source
Thin solid films. 2008, Vol 516, Num 7, pp 1396-1400, 5 p ; ref : 21 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- AFM Optical properties PEMOCVD ZnO
- Keyword (fr)
- Cellule solaire Couche mince Dépendance température Ellipsométrie Grosseur grain Hétérojonction Indice réfraction Microscopie force atomique Morphologie surface Mécanisme croissance Méthode MOCVD Oxyde de zinc Propriété optique Propriété électrique Rugosité 6855J 7361G 7866H 8115G Substrat silicium ZnO
- Keyword (en)
- Solar cells Thin films Temperature dependence Ellipsometry Grain size Heterojunctions Refractive index Atomic force microscopy Surface morphology Growth mechanism MOCVD Zinc oxide Optical properties Electrical properties Roughness
- Keyword (es)
- Mecanismo crecimiento Zinc óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61G Ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66H Ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20295007
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2007.03.064 
https://dx.doi.org/10.1016/j.tsf.2007.03.064
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