Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes
- Author
- JONG HOON KIM1 ; BYUNG DU AHN1 ; CHOONG HEE LEE1 ; KYUNG AH JEON1 ; HONG SEONG KANG1 ; SANG YEOL LEE1
[1] Department of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea, Republic of - Conference title
- Proceedings of Symposium R on Advances in Transparent Electronics: From Materials to Devices. EMRS 2006 Conference, Nice, France
- Conference name
- Advances in Transparent Electronics: from materials to devices I. Symposium R (Nice 2006-05-29)
- Author (monograph)
- FORTUNATO, Elvira (Editor)1 ; HOSONO, Hideo (Editor)1 ; GRANQVIST, Claes (Editor)1 ; WAGER, John (Editor)1
[1] CENIMAT, FCT-UNL, Campus de Caparica, 2829-516 Caparica, Portugal - Source
Thin solid films. 2008, Vol 516, Num 7, pp 1529-1532, 4 p ; ref : 16 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition gallium Canal n Couche mince transparente Courant drain Dépôt laser pulsé Dépôt physique phase vapeur Electrode commande Fabrication microélectronique Méthode ablation laser Oxyde d'hafnium Oxyde de zinc Pulvérisation haute fréquence Semiconducteur Seuil tension Spectre absorption Transistor couche mince 8115C 8115F 8530T 8540H HfO2 Substrat verre ZnO
- Keyword (en)
- Gallium addition n channel Transparent thin film Drain current Pulsed laser deposition Physical vapor deposition Gates Microelectronic fabrication Laser ablation technique Hafnium oxide Zinc oxide Radiofrequency sputtering Semiconductor materials Voltage threshold Absorption spectrum Thin film transistor
- Keyword (es)
- Adición galio Canal n Película transparente Corriente dren Deposición física fase vapor Fabricación microeléctrica Hafnio óxido Zinc óxido Pulverización alta frecuencia Semiconductor(material) Umbral tensión Espectro de absorción Transistor capa delgada
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15F Laser deposition
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20295036
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2007.03.101 
https://dx.doi.org/10.1016/j.tsf.2007.03.101
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