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Reduction of threshold voltage fluctuation for organic field effect transistors by increase of insulator capacitance

Author
SUEMORI, Kouji1 ; UEMURA, Sei1 ; YOSHIDA, Manabu1 ; HOSHINO, Satoshi1 ; KODZASA, Takehito1 ; KAMATA, Toshihide1
[1] Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Conference title
The 7th International Conference on Nano-Molecular Electronics (ICNME 2006)
Conference name
International Conference on Nano-Molecular Electronics (ICNME) (ICNME) (7 ; Kobe 2006-12-12)
Author (monograph)
IWAMOTO, Mitsumasa (Editor)1 ; KANETO, Keiichi (Editor)2 ; YOKOYAMA, Shiyoshi (Editor)3 ; KAHN, Antoine (Editor)4
[1] Tokyo Institute of Technology, Japan
[2] Kyushu Institute of Technology, Japan
[3] Kobe Advanced Research Center, NICT, Japan
[4] Princeton University, United States
Source

Thin solid films. 2008, Vol 516, Num 9, pp 2739-2742, 4 p ; ref : 15 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Author keyword
Capacitance Fluctuation Organic field effect transistor Threshold voltage
Keyword (fr)
Capacité électrique Electrode commande Fiabilité Fluctuation Oxyde de silicium Pentacène Seuil tension Transistor effet champ 8530T SiO2
Keyword (en)
Capacitance Gates Reliability Fluctuations Silicon oxides Pentacene Voltage threshold Field effect transistor
Keyword (es)
Capacitancia Fiabilidad Fluctuación Pentaceno Umbral tensión Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20296053

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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