Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate
- Author
- CHO, S. I1 ; CHANG, K1 ; KWON, M. S2
[1] Department of Chemical Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea, Republic of
[2] Department of Materials Science and Engineering, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea, Republic of - Source
Journal of materials science. 2008, Vol 43, Num 1, pp 406-408, 3 p ; ref : 16 ref
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Contrainte hydrostatique Contrainte résiduelle Couche épitaxique Croissance cristalline en phase vapeur Déformation biaxiale Dépendance température Etude expérimentale Gallium Nitrure Hétéroépitaxie Nitrure Propriété mécanique GaN Substrat saphir
- Keyword (en)
- Inorganic compounds Hydrostatic stress Residual stresses Epitaxial layers Crystal growth from vapors Biaxial strain Temperature dependence Experimental study Gallium Nitrides Heteroepitaxy Nitrides Mechanical properties
- Keyword (es)
- Tensión hidrostática Deformación biaxial Heteroepitaxia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic / 001B60H60B Mechanical and acoustical properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20302619
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10853-007-2196-3 
https://dx.doi.org/10.1007/s10853-007-2196-3
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