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A review of molecule-based conductors electrodeposited as thin films on silicon wafers : thin films of molecular organic materials

Author
DE CARO, Dominique1 ; MALFANT, I1 ; SAVY, J.-P1 ; VALADE, L1
[1] Laboratoire de Chimie de Coordination (CNRS UPR 8241), 205, route de Narbonne, 31077 Toulouse, France
Source

Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 18 ; 184012.1-184012.10 ; ref : 39 ref

CODEN
JCOMEL
ISSN
0953-8984
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Composé du nickel Conducteur organique Conductivité électrique Couche mince Dépôt électrolytique Microscopie électronique balayage Morphologie Mécanisme croissance Nanofil Structure moléculaire
Keyword (en)
Nickel compounds Organic conductors Electrical conductivity Thin films Electrodeposition Scanning electron microscopy Morphology Growth mechanism Nanowires Molecular structure
Keyword (es)
Mecanismo crecimiento
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15P Electrodeposition, electroplating

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20316089

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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