Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor
- Author
- HEMMINGSSON, C1 ; POZINA, G1 ; HEUKEN, M2 ; SCHINELLER, B2 ; MONEMAR, B1
[1] Department of Physics, Chemistry and Biology, Linkoping University, 581 83 Linkoping, Sweden
[2] Aixtron AG, 52072 Aachen, Germany - Conference title
- Proceedings of the E-MRS Conference, Symposium G. Substrates of Wide Bandgap Materials
- Conference name
- Good & Cheap substrates of wide bandgap semiconductors: how far is the target? E-MRS Symposium (Strasbourg 2007-05-29)
- Author (monograph)
- FORNARI, Roberto (Editor)1 ; ROJO, Juan Carlos (Editor)2 ; YAKIMOVA, Rositza (Editor)3
[1] Leibniz-Institute for Crystal Growth and Institute of Physics, Humboldt University, Berlin, Germany
[2] General Electric Global Research, New York, United States
[3] Department of Physics, Linköping University, Sweden - Source
Journal of crystal growth. 2008, Vol 310, Num 5, pp 906-910, 5 p ; ref : 17 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 81.05.Ea; 81.10.Bk; 81.10.-h; 81.15.Kk; 78.55.-m Al. Fluid flows; Al. Growth models; Al. Mass transfer; A2. Growth from vapor; A3. Hydride vapor-phase epitaxy; B2. Semiconducting III-V materials
- Keyword (fr)
- Diffusion(transport) Ecoulement fluide Epitaxie phase vapeur Etude théorique Halogénure Modélisation Mécanisme croissance Nitrure de gallium Optimisation Photoluminescence Propriété optique Précurseur Semiconducteur III-V Simulation numérique Taux croissance Transfert masse 6855A 7866F 8115K GaN
- Keyword (en)
- Diffusion Fluid flow VPE Theoretical study Halides Modelling Growth mechanism Gallium nitride Optimization Photoluminescence Optical properties Precursor III-V semiconductors Digital simulation Growth rate Mass transfer
- Keyword (es)
- Mecanismo crecimiento Galio nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20316279
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2007.11.062 
https://dx.doi.org/10.1016/j.jcrysgro.2007.11.062
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