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Spin Currents in Semiconductors, Metals, and Insulators : Advances in Spinctronics

Author
NAGAOSA, Naoto1 2
[1] CREST, Department of Applied Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
[2] Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, Tsukuba, Ibaraki 305-8562, Japan
Source

Journal of the Physical Society of Japan. = Nihon Butsuri Gakkai ōji hōkoku. 2008, Vol 77, Num 3 ; 031010.1-031010.9 ; ref : 65 ref

CODEN
JUPSAU
ISSN
0031-9015
Scientific domain
Crystallography; Mechanics acoustics; Condensed state physics; Theoretical physics
Publisher
Institute of Pure and Applied Physics, Tokyo / Physical Society of Japan, Tokyo
Publication country
Japan
Document type
Article
Language
English
Author keyword
Berry phase anomalous Hall effect spin Hall effect spin chirality
Keyword (fr)
Chiralité Effet Hall de spin Effet champ électrique Electronique spin Interaction spin orbite Matériau ferromagnétique Matériau multiferroïque Phase Berry Semiconducteur
Keyword (en)
Chirality Spin Hall effect Electric field effects Spintronics Spin-orbit interactions Ferromagnetic materials Ferroic material Berry phase Semiconductor materials
Keyword (es)
Electrónica de espin Material ferroico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B25 Spin polarized transport

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20317015

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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