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The acoustic method of the surface potential investigation in GaP:Te (110) real surface

Author
PUSTELNY, T1 ; PUSTELNY, B1
[1] Institute of Physics, Silesian University of Technology, 44-100 Gliwice, Poland
Conference title
Wave and Quantum Acoustics. 36th Winter School
Conference name
Winter School on Wave and Quantum Acoustics (36 ; Wisła 2008)
Author (monograph)
BODZENTA, Jerzy (Editor)1
[1] Silesian University of Technology, Poland
Source

The European physical journal. Special topics. 2008, Vol 154, pp 281-284, 4 p ; ref : 12 ref

Scientific domain
Physics
Publisher
EDP Sciences, [S.l.] / Springer, [S.l.]
Publication country
France
Document type
Conference Paper
Language
English
Keyword (fr)
Choc mécanique Effet acoustoélectrique Haute fréquence Matériau piézoélectrique Monocristal Méthode acoustique Potentiel surface Semiconducteur Traitement chimique Traitement surface
Keyword (en)
Mechanical shock Acoustoelectric effects High frequency Piezoelectric materials Monocrystals Acoustic method Surface potential Semiconductor materials Chemical treatment Surface treatments
Keyword (es)
Alta frecuencia Método acústico Tratamiento químico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C25 Surface conductivity and carrier phenomena

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20339664

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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