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A universal electron mobility model of strained Si MOSFETs based on variational wave functions

Author
RENRONG LIANG1 ; DEBIN LI1 ; JUN XU1
[1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Source

Solid-state electronics. 2008, Vol 52, Num 6, pp 863-870, 8 p ; ref : 34 ref

ISSN
0038-1101
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Intervalley scattering Mobility model Phonon-limited mobility Strained Si Surface roughness scattering Variational wave function
Keyword (fr)
Couche inversion Diffusion phonon Diffusion surface Fonction onde Germanium Implémentation Mobilité électron Phonon Rugosité Semiconducteur multivallée Silicium Simulateur Transistor MOSFET Ge Si
Keyword (en)
Inversion layer Phonon scattering Surface scattering Wave function Germanium Implementation Electron mobility Phonon Roughness Multivalley semiconductor Silicon Simulator MOSFET
Keyword (es)
Capa inversión Difusión fonón Función onda Germanio Implementación Movilidad electrón Fonón Rugosidad Semiconductor multivalle Silicio Simulador
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20349814

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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