A physical model of floating body effects in polysilicon thin film transistors
- Author
- WU, W. J1 ; YAO, R. H1 ; CHEN, T1 ; CHEN, R. S1 ; DENG, W. L1 ; ZHENG, X. R1
[1] Institute of Microelectronics, South China University of Technology, Guangzhou 510640, China - Source
Solid-state electronics. 2008, Vol 52, Num 6, pp 930-936, 7 p ; ref : 45 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Floating body Kink effect Parasitic bipolar transistor Polysilicon thin film transistors
- Keyword (fr)
- Corps flottant Effet Poole Frenkel Gain Jonction graduelle Jonction p n Jonction émetteur base Mobilité porteur charge Polycristal Silicium Transistor bipolaire Transistor couche mince Si
- Keyword (en)
- Floating body Poole Frenkel effect Gain Graded junction p n junction Base emitter junction Charge carrier mobility Polycrystal Silicon Bipolar transistor Thin film transistor
- Keyword (es)
- Cuerpo flotante Efecto Poole Frenkel Ganancia Unión graduada Unión p n Unión emisor base Movilidad portador carga Policristal Silicio Transistor bipolar Transistor capa delgada
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20349825
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2008.01.008 
https://dx.doi.org/10.1016/j.sse.2008.01.008
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