Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts
- Author
- HASSANINIA, Iman1 2 ; MOHAMMAD HOSSEIN SHEIKHI1 2 ; KORDROSTAMI, Zoheir1 2
[1] Department of Electrical Engineering, School of Engineering, Shiraz University, Shiraz, Iran, Islamic Republic of
[2] Nanotechnology Research Institute, Shiraz University, Shiraz, Iran, Islamic Republic of - Source
Solid-state electronics. 2008, Vol 52, Num 6, pp 980-985, 6 p ; ref : 24 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Ambipolarity Band to band tunneling Carbon nanotube Doping profile
- Keyword (fr)
- Barrière potentiel Carbone Diffusion ambipolaire Dispositif nanotube Effet tunnel Equation Poisson Equation Schrödinger Fonction Green Matériau dopé Nanotube carbone Nanoélectronique Profil dopage Propriété transport Régime hors équilibre Structure bande Transistor MOSFET Transistor effet champ 8107D C
- Keyword (en)
- Potential barrier Carbon Ambipolar diffusion Nanotube devices Tunnel effect Poisson equation Schrödinger equation Green function Doped materials Carbon nanotubes Nanoelectronics Doping profile Transport properties Non equilibrium conditions Band structure MOSFET Field effect transistor
- Keyword (es)
- Barrera potencial Carbono Difusión ambipolar Efecto túnel Ecuación Poisson Ecuación Schrödinger Función Green Nanoelectrónica Perfil doping Propiedad transporte Régimen fuera equilibrio Estructura banda Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20349834
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2008.01.021 
https://dx.doi.org/10.1016/j.sse.2008.01.021
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