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Morphological and photoluminescence study of porous thin SiC layer grown onto silicon

Author
BOURENANE, K1 ; KEFFOUS, A1 ; KECHOUACHE, M2 ; NEZZAL, G3 ; BOUKEZZATA, A3 ; KERDJA, T4
[1] Unité de Développement de la Technologie du Silicium (UDTS), 02, Bd. Frantz Fanon, B.P. 140 Alger-7 Merveilles, Alger, Algeria
[2] Université des Sciences et Technologie Houari Boumediene (USTHB), Faculté de Physique, BP. 32 EL Alia, Baba Ezzouar, 16111, Alger, Algeria
[3] Université des Sciences et Technologie Houari Boumediene (USTHB), Faculté de Génie Mécanique & Génie des Procédés, BP. 32 EL Alla, Baba Ezzouar, 16111, Alger, Algeria
[4] Centre de Développement des Techniques Avancées (CDTA), Baba Hassen, Alger, Algeria
Conference title
Papers Presented at ECASIA'07. Proceedings of the 12th European Conference on Applications of surface and Interface Analysis, 9-14 September 2007, Brussels, Belgium
Conference name
European Conference on Applications of surface and Interface Analysis (12 ; Brussels 2007-09-09)
Author (monograph)
PIREAUX, Jean-Jacques (Editor); WATTS, John F (Editor)
Belgian University, Namur, Belgium (Organiser of meeting)
Université de Louvain, Belgium (Organiser of meeting)
Vrije Universiteit Brussel, Belgium (Organiser of meeting)
Université Libre de Bruxelles, Belgium (Organiser of meeting)
Source

Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 763-768, 6 p ; ref : 15 ref

CODEN
SIANDQ
ISSN
0142-2421
Scientific domain
General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Wiley, Chichester
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Author keyword
porous silicon carbide pulsed laser deposition silicon carbide silicon thin layer
Keyword (fr)
Carbure de silicium Composé minéral Couche mince Croissance film Dépôt laser pulsé Matériau poreux Photoluminescence Silicium C Si Si SiC
Keyword (en)
Silicon carbide Inorganic compounds Thin films Film growth Pulsed laser deposition Porous materials Photoluminescence Silicon
Keyword (es)
Silicio carburo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20361443

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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