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A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation

Author
ZARDAS, G. E1 ; YANNAKOPOULOS, P. H2 ; SYMEONIDES, Chrys I1 ; VESELY, M3 ; EUTHYMIOU, P. C1
[1] Solid State Section, Physics Department, University of Athens, 15784 Zografos, Athens, Greece
[2] Computer Systems Engineering Department, Technological Education Institute of Piraeus, P. Ralli & Thivon 250, 12244 Aigaleo, Athens, Greece
[3] Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak Technical University, Ilkovicova 3, 81219 Bratislava, Slovakia
Source

Microelectronics journal. 2008, Vol 39, Num 5, pp 737-739, 3 p ; ref : 5 ref

ISSN
0959-8324
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
61.80.Jh 72.23.Ra 72.40.Cw 72.80.Ey GaAs Photoconductivity Recombination and trapping Semiconductors Semiinsulating
Keyword (fr)
Arséniure de gallium Bande interdite Courant photoélectrique Effet température Energie transition Photoconductivité 7240 GaAs
Keyword (en)
Gallium arsenides Energy gap Photocurrents Temperature effects Transition energy Photoconductivity
Keyword (es)
Energía transición
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B40 Photoconduction and photovoltaic effects; photodielectric effects

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20368160

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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