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Air-stable ambipolar organic field-effect transistor based on a novel bi-channel structure

Author
ZHONGMING WEI1 2 ; WEI XU1 ; WENPING HU1 ; DAOBEN ZHU1
[1] Beijing National Laboratory for Molecular Science, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100080, China
[2] Graduate School of Chinese Academy of Sciences, Beijing, 100080, China
Source

Journal of material chemistry. 2008, Vol 18, Num 21, pp 2420-2422, 3 p ; ref : 23 ref

ISSN
0959-9428
Scientific domain
Chemistry
Publisher
Royal Society of Chemistry, Cambridge
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Complexe de cuivre Composé organométallique Dépôt sous vide Haute performance Phtalocyanine métallique Phtalocyanine Semiconducteur organique Structure tunnel Transistor effet champ 8115E 8530T
Keyword (en)
Copper complexes Organometallic compounds Vacuum deposition High performance Metallophthalocyanine Phthalocyanines Organic semiconductors Channel structure Field effect transistors
Keyword (es)
Alto rendimiento Ftalocianina metálica Estructura túnel
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15E Vacuum deposition

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20373297

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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