Air-stable ambipolar organic field-effect transistor based on a novel bi-channel structure
- Author
- ZHONGMING WEI1 2 ; WEI XU1 ; WENPING HU1 ; DAOBEN ZHU1
[1] Beijing National Laboratory for Molecular Science, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100080, China
[2] Graduate School of Chinese Academy of Sciences, Beijing, 100080, China - Source
Journal of material chemistry. 2008, Vol 18, Num 21, pp 2420-2422, 3 p ; ref : 23 ref
- Publisher
- Royal Society of Chemistry, Cambridge
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Complexe de cuivre Composé organométallique Dépôt sous vide Haute performance Phtalocyanine métallique Phtalocyanine Semiconducteur organique Structure tunnel Transistor effet champ 8115E 8530T
- Keyword (en)
- Copper complexes Organometallic compounds Vacuum deposition High performance Metallophthalocyanine Phthalocyanines Organic semiconductors Channel structure Field effect transistors
- Keyword (es)
- Alto rendimiento Ftalocianina metálica Estructura túnel
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15E Vacuum deposition
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20373297
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1039/b803475c 
https://dx.doi.org/10.1039/b803475c
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