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Molecular dynamics simulation of microcrystalline Si deposition processes by silane plasmas

Author
MATSUKUMA, Masaaki1 ; HAMAGUCHI, Satoshi1
[1] Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Conference title
Proceedings of the International Symposium on Dry Process - DPS 2006
Conference name
International Symposium on Dry Process - DPS 2006 (Nagoya 2006-11-29)
Author (monograph)
STAMATE, E (Editor)1 ; ONO, K (Editor)2 ; SHIRATANI, M (Editor)3 ; ECONOMOU, D. J (Editor)4 ; CHANG, J. P (Editor)5 ; KUSANO, E (Editor)6 ; LEE, N.-E (Editor)7 ; LEE, J. K (Editor)8 ; FUJIWARA, N (Editor)9
The Institute of Electrical Engineers of Japan, Japan (Organiser of meeting)
The Japan Society of Applied Physics, Japan (Organiser of meeting)
[1] Risø - Technical University of Denmark, Denmark
[2] Kyoto University, Japan
[3] Kyushu University, Japan
[4] University of Houston, United States
[5] University of California at Los Angeles, United States
[6] Kanazawa Institute of Technology, Japan
[7] SungKyunKwan University, Japan
[8] Pohang University of Science and Technology, Japan
[9] Renesas Technology Corporation, Japan
Source

Thin solid films. 2008, Vol 516, Num 11, pp 3443-3448, 6 p ; ref : 21 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Author keyword
MD simulation Microcrystalline silicon PECDV Surface diffusion
Keyword (fr)
Adatome Calcul ab initio Coefficient diffusion Diffusion superficielle Etude théorique Mécanisme croissance Méthode PECVD Méthode dynamique moléculaire Potentiel interatomique Procédé dépôt Silane Silicium Simulation numérique 6855A 8115G Si μc-Si:H
Keyword (en)
Adatoms Ab initio calculations Diffusion coefficient Surface diffusion Theoretical study Growth mechanism PECVD Molecular dynamics method Interatomic potential Deposition process Silanes Silicon Digital simulation
Keyword (es)
Coeficiente difusión Mecanismo crecimiento Potencial interatómico Procedimiento revestimiento
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20373352

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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