Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask
- Author
- KIM, D. Y1 ; KO, J. H1 ; PARK, M. S1 ; LEE, N.-E1
[1] School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea, Republic of - Conference title
- Proceedings of the International Symposium on Dry Process - DPS 2006
- Conference name
- International Symposium on Dry Process - DPS 2006 (Nagoya 2006-11-29)
- Author (monograph)
- STAMATE, E (Editor)1 ; ONO, K (Editor)2 ; SHIRATANI, M (Editor)3 ; ECONOMOU, D. J (Editor)4 ; CHANG, J. P (Editor)5 ; KUSANO, E (Editor)6 ; LEE, N.-E (Editor)7 ; LEE, J. K (Editor)8 ; FUJIWARA, N (Editor)9
The Institute of Electrical Engineers of Japan, Japan (Organiser of meeting)
The Japan Society of Applied Physics, Japan (Organiser of meeting)
[1] Risø - Technical University of Denmark, Denmark
[2] Kyoto University, Japan
[3] Kyushu University, Japan
[4] University of Houston, United States
[5] University of California at Los Angeles, United States
[6] Kanazawa Institute of Technology, Japan
[7] SungKyunKwan University, Japan
[8] Pohang University of Science and Technology, Japan
[9] Renesas Technology Corporation, Japan - Source
Thin solid films. 2008, Vol 516, Num 11, pp 3512-3516, 5 p ; ref : 23 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- ITO Inductively coupled plasma Infinite etch selectivity Plasma etching
- Keyword (fr)
- Composé organométallique Couche mince Fabrication microélectronique Gravure plasma Méthane Oxyde d'indium Oxyde d'étain Photorésist Plasma couplé inductivement Réaction chimique Sélectivité Vitesse gravure 5277B 5280Y 8540 8540H
- Keyword (en)
- Organometallic compounds Thin films Microelectronic fabrication Plasma etching Methane Indium oxide Tin oxide Photoresists Inductively coupled plasma Chemical reactions Selectivity Etching rate
- Keyword (es)
- Fabricación microeléctrica Grabado plasma Indio óxido Estaño óxido Selectividad Velocidad grabado
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B77 Plasma applications / 001B50B77B Etching and cleaning
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20373366
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.tsf.2007.08.021 
https://dx.doi.org/10.1016/j.tsf.2007.08.021
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2007.08.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:3:\"516\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"3512\";s:8:\"\u0000*\u0000epage\";s:4:\"3516\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:8:\"KO, J. H\";i:1;s:10:\"PARK, M. S\";i:2;s:9:\"LEE, N.-E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:68:\"Proceedings of the International Symposium on Dry Process - DPS 2006\";s:8:\"\u0000*\u0000title\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2007.08.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:3:\"516\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"3512\";s:8:\"\u0000*\u0000epage\";s:4:\"3516\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:8:\"KO, J. H\";i:1;s:10:\"PARK, M. S\";i:2;s:9:\"LEE, N.-E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:68:\"Proceedings of the International Symposium on Dry Process - DPS 2006\";s:8:\"\u0000*\u0000title\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2007.08.021\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2007.08.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:3:\"516\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"3512\";s:8:\"\u0000*\u0000epage\";s:4:\"3516\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:8:\"KO, J. H\";i:1;s:10:\"PARK, M. S\";i:2;s:9:\"LEE, N.-E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:68:\"Proceedings of the International Symposium on Dry Process - DPS 2006\";s:8:\"\u0000*\u0000title\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2007.08.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:3:\"516\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"3512\";s:8:\"\u0000*\u0000epage\";s:4:\"3516\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:8:\"KO, J. H\";i:1;s:10:\"PARK, M. S\";i:2;s:9:\"LEE, N.-E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:68:\"Proceedings of the International Symposium on Dry Process - DPS 2006\";s:8:\"\u0000*\u0000title\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2007.08.021\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:3:\"516\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"3512\";s:8:\"\u0000*\u0000epage\";s:4:\"3516\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:3:\"KIM\";s:10:\"\u0000*\u0000aufirst\";s:4:\"D. Y\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:8:\"KO, J. H\";i:1;s:10:\"PARK, M. S\";i:2;s:9:\"LEE, N.-E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:68:\"Proceedings of the International Symposium on Dry Process - DPS 2006\";s:8:\"\u0000*\u0000title\";s:138:\"Infinitely high etch selectivity during CH4\/H2\/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
