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Simulation of electrically tunable semiconductor nanopores for ion current/single bio-molecule manipulation

Author
GRACHEVA, Maria E1 ; LEBURTON, Jean-Pierre2
[1] Beckman Institute for Advanced Science and Technology, University of Illinois (Urbana-Champaign), 405 N. Mathews Ave, Urbana, IL 61801, United States
[2] Department of Electrical and Computer Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois (Urbana-Champaign), 405 N. Mathews Ave, Urbana, IL 61801, United States
Source

Journal of computational electronics (Print). 2008, Vol 7, Num 1, pp 6-9, 4 p ; ref : 12 ref

ISSN
1569-8025
Scientific domain
Electronics
Publisher
Kluwer Academic Publishers, Boston / Kluwer Academic Publishers, Dordrecht
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Diode Ion filter Layered structure Semiconductor membrane Single molecule manipulation
Keyword (fr)
Circuit accordable Couche mince Courant fuite Diode Dopage Effet redresseur Equation Poisson Potentiel électrostatique
Keyword (en)
Tunable circuit Thin film Leakage current Diode Doping Rectifier effect Poisson equation Electrostatic potential
Keyword (es)
Circuito acordable Capa fina Corriente escape Diodo Doping Efecto rectificador Ecuación Poisson Potencial electrostático
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20381279

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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