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Refractive index, free carrier concentration, and mobility depth profiles of ion implanted Si : optical investigation using FTIR spectroscopy

Author
KATSIDIS, Charalambos C1
[1] Department of Physics, Solid State Section, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
Source

Journal of the Optical Society of America. B, Optical physics (Print). 2008, Vol 25, Num 5, pp 854-864, 11 p ; ref : 42 ref

CODEN
JOBPDE
ISSN
0740-3224
Scientific domain
Optics
Publisher
Optical Society of America, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Densité porteur charge Dispersion optique Etude théorique Implantation ion Indice réfraction Matériau optique Mobilité porteur charge Optique géométrique Porteur libre Semiconducteur Spectrométrie IR 4215 4270N
Keyword (en)
Carrier density Optical dispersion Theoretical study Ion implantation Refractive index Optical materials Carrier mobility Geometrical optics Free carrier Semiconductor materials Infrared spectroscopy
Keyword (es)
Portador libre
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B15 Geometrical optics

Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B70 Optical materials / 001B40B70N Other nonlinear optical materials; photorefractive and semiconductor materials

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20384517

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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