TaN underlayers for spin valves deposited directly on top of Si substrates
- Author
- KIM, Jiwon1 ; JO, Soonchul1
[1] School of Electronic Engineering, Soongsil University, 511, Sangdo-Dong, Dongjak-Ku, Seoul 156-743, Korea, Republic of - Source
Journal of magnetism and magnetic materials. 2008, Vol 320, Num 16, pp 2116-2120, 5 p ; ref : 8 ref
- CODEN
- JMMMDC
- ISSN
- 0304-8853
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Si substrate Spin valve TaN underlayer
- Keyword (fr)
- Adhérence Barrière diffusion Couche active Couche interfaciale Diffraction RX Magnétorésistance géante Nitrure de tantale Recuit Vanne spin
- Keyword (en)
- Adhesion Diffusion barriers Active layer Interfacial layer XRD Giant magnetoresistance Tantalum nitride Annealing Spin valve
- Keyword (es)
- Capa activa Capa interfacial Tantalio nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E47 Magnetotransport phenomena, materials for magnetotransport / 001B70E47D Giant magnetoresistance
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20398184
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jmmm.2008.03.033 
https://dx.doi.org/10.1016/j.jmmm.2008.03.033
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