Improved transport properties of microcrystalline silicon films grown by HWCVD with a variable hydrogen dilution process
- Autor
- NIIKURA, Chisato1 ; BRENOT, Romain1 ; GUILLET, Joelle1 ; BOUREE, Jean-Eric1
[1] Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau, France - Titulo de la conferencia
- Fourth international conference on hot-wire CVD (Cat-CVD) process
- Nombre de la conferencia
- International conference on hot-wire CVD (Cat-CVD) process (Cat-CVD) process (4 ; Takayama, Gifu 2006-10-04)
- Autor ( monografía)
- MATSUMURA, Hideki (Editor); NONOMURA, Shuichi (Editor); SCHRÖDER, Bernd (Editor); SCHROPP, Ruud E. I (Editor)
- Fuente
Thin solid films. 2008, Vol 516, Num 5, pp 568-571, 4 p ; ref : 17 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier Science, Lausanne
- País de la publicación
- Switzerland
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- Electronic transport Hot-wire chemical vapor deposition Hydrogen dilution Microcrystalline silicon
- Palabra clave (fr)
- Cavité dans réseau Conductivité électrique Couche mince Croissance film Diffusion(transport) Défaut cristallin Dépôt chimique phase vapeur filament chaud Dépôt chimique phase vapeur Ellipsométrie spectroscopique Mécanisme croissance Nucléation Propriété transport Silane Silicium Spectre résolution temporelle 6172Q 6835F 6855A 8115G Si
- Palabra clave (in)
- Voids Electrical conductivity Thin films Film growth Diffusion Crystal defects Hot filament chemical vapor deposition CVD Spectroscopic ellipsometry Growth mechanism Nucleation Transport properties Silanes Silicon Time resolved spectra
- Palabra clave (es)
- Depósito químico fase vapor filamento caliente Elipsometría espectroscópica Mecanismo crecimiento Propiedad transporte
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35F Diffusion; interface formation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 20400795
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2007.06.049 
https://dx.doi.org/10.1016/j.tsf.2007.06.049
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