The comparisons of growth mechanisms for Si thin films with different deposition rates in CVD process by the description of the roughness evolution
- Author
- LIU, F1 ; SUN, Z1 ; ZI, W1 ; ZHOU, Y1 ; ZHU, M1
[1] Graduate University of Chinese Academy of Sciences, P.O. Box 4588, Beijing 100049, China - Conference title
- Amorphous and Nanocrystalline Semiconductors - Science and Technology. Proceedings of the Twenty Second International Conference on Amorphous and Nanocrystalline Semiconductors
- Conference name
- International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22) (ICANS 22) (22 ; Breckenridge, CO 2007-08-19)
- Source
Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2345-2349, 5 p ; ref : 13 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 68.55.-a; 68.37.-d; 68.35.Ct; 81.15.Gh Silicon; Chemical vapor deposition; Atomic force microscopy; Micro-crystallinity
- Keyword (fr)
- Couche mince Cristallinité Microscopie force atomique Mécanisme croissance Méthode PECVD Rugosité Silicium Taux croissance Vitesse dépôt Si a-Si:H
- Keyword (en)
- Thin films Crystallinity Atomic force microscopy Growth mechanism PECVD Roughness Silicon Growth rate Deposition rate
- Keyword (es)
- Cristalinidad Mecanismo crecimiento Velocidad deposición
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35C Interface structure and roughness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20405010
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jnoncrysol.2007.10.055 
https://dx.doi.org/10.1016/j.jnoncrysol.2007.10.055
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