Influence of gap states on the electrical stability of pentacene thin film transistors
- Author
- BENOR, A1 ; KNIPP, D1 ; NORTHRUP, J2 ; VÖLKEL, A. R2 ; STREET, R. A2
[1] Jacobs University Bremen, School of Engineering and Science, Electronic Devices and Nanophotonics Laboratory, 28759 Bremen, Germany
[2] Palo Alto Research Center, Electronic Materials and Devices Laboratory, Palo Alto, CA 94304, United States - Conference title
- Amorphous and Nanocrystalline Semiconductors - Science and Technology. Proceedings of the Twenty Second International Conference on Amorphous and Nanocrystalline Semiconductors
- Conference name
- International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 22) (ICANS 22) (22 ; Breckenridge, CO 2007-08-19)
- Source
Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2875-2878, 4 p ; ref : 15 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 73.50.Gr; 85.30.Tv; 71.20.-b; 73.50.-h; 72.80.Le Thin film transistors; Band structures; Defects
- Keyword (fr)
- Bande interdite Bande valence Centre accepteur Couche mince Densité état électron Défaut Effet contrainte Etat défaut Mobilité porteur charge Pentacène Polycristal Semiconducteur III-V Structure bande Tension seuil Transistor GaP
- Keyword (en)
- Energy gap Valence bands Acceptor center Thin films Electronic density of states Defects Stress effects Defect states Carrier mobility Pentacene Polycrystals III-V semiconductors Band structure Threshold voltage Transistors
- Keyword (es)
- Centro aceptor
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20405124
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jnoncrysol.2007.10.093 
https://dx.doi.org/10.1016/j.jnoncrysol.2007.10.093
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