A pseudopotential method for investigating the surface roughness effect in ultrathin body transistors
- Author
- ZHU, Zhen-Gang1 ; GENGCHIAU LIANG1 ; LI, Ming-Fu1 ; SAMUDRA, Ganesh1
[1] Silicon Nano-Device Laboratory (SNDL), ECE Department, National University of Singapore, Singapore - Source
Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 23 ; 235229.1-235229.5 ; ref : 24 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Approximation champ effectif Couche ultramince Défaut cristallin Fluctuation Interaction électron défaut Méthode pseudopotentiel Rugosité Semiconducteur Transistor effet champ
- Keyword (en)
- Effective field approximation Ultrathin films Crystal defect Fluctuations Electron-defect interactions Pseudopotential method Roughness Semiconductor materials Field effect transistor
- Keyword (es)
- Aproximación campo efectivo Defecto cristalino Fluctuación Método seudopotencial Rugosidad Semiconductor(material) Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20414352
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/20/23/235229 
https://dx.doi.org/10.1088/0953-8984/20/23/235229
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