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AFM tip-induced ripple pattern on AIII-BV semiconductor surfaces

Author
SUCH, B1 ; KROK, F1 ; SZYMONSKI, M1
[1] Research Centre for Nanometer-Scale Science and Advanced Materials (NANOSAM), Faculty of Physics, Astronomy and Applied Computer Science, Jagiellonian University, Reymonta 4, 30-059 Krakow, Poland
Source

Applied surface science. 2008, Vol 254, Num 17, pp 5431-5434, 4 p ; ref : 25 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
AFM;Wear;InSb;62.20.Qp;68.37.Ps;81.40.Pq
Keyword (fr)
Antimoniure d'indium Formation nanomotif Interaction pointe surface Microscopie force atomique Ondulation Pointe microscope Semiconducteur Structure surface Terrasse In Sb InSb Composé minéral
Keyword (en)
Indium antimonides Nanopatterning Tip surface interactions Atomic force microscopy Ripples Microscope tips Semiconductor materials Surface structure Terrace Inorganic compounds
Keyword (es)
Formacíon nanomotivo Terraza
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy / 001B60A16C Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16R Nanoscale pattern formation

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20429637

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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