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Spin-orbit coupling in bulk GaAs

Author
FU, J. Y1 2 ; WENG, M. Q2 ; WU, M. W1 2
[1] Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
[2] Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
Source

Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 9, pp 2890-2893, 4 p ; ref : 31 ref

ISSN
1386-9477
Scientific domain
Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
71.70.Ej 85.75.-d L- and X-valleys Spin-orbit coupling Spintronics
Keyword (fr)
Approximation liaison forte Arséniure de gallium Décomposition niveau énergie Electronique spin Interaction spin orbite Zone Brillouin GaAs
Keyword (en)
Tight binding approximation Gallium arsenides Energy-level splitting Spintronics Spin-orbit interactions Brillouin zones
Keyword (es)
Electrónica de espin
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A70 Level splitting and interactions / 001B70A70E Spin-orbit coupling, zeeman, stark, and strain splitting, jahn-teller effect

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20433722

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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