The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs : A Study by Ultrafast On-The-Fly IDLIN Technique
- Author
- MAHETA, Vrajesh D1 ; OLSEN, Christopher2 ; AHMED, Khaled2 ; MAHAPATRA, Souvik1
[1] Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
[2] Applied Materials, Santa Clara, CA 95054-3299, United States - Source
I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 7, pp 1630-1638, 9 p ; ref : 50 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Device degradation hole trapping interface traps negative-bias temperature instability (NBTI) on-the-fly (OTF) IDLIN p-MOSFETs plasma oxynitride thermal oxynitride
- Keyword (fr)
- Champ température Contrainte thermique Contrainte électrique Densité élevée Dépendance température Endommagement Fiabilité Nitruration Piégeage porteur charge Processus ultrarapide Transistor MOSFET Instabilité thermique de la polarisation négative
- Keyword (en)
- Temperature distribution Thermal stress Electric stress High density Temperature dependence Damaging Reliability Nitriding Charge carrier trapping Ultrafast process MOSFET Negative bias temperature instability
- Keyword (es)
- Campo temperatura Tensión térmica Tensión eléctrica Densidad elevada Deterioración Fiabilidad Nitruración Captura portador carga Proceso ultrarrápido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20445223
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2008.923524 
https://dx.doi.org/10.1109/TED.2008.923524
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