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Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

Author
ZHANG, Z. Y1 ; HOGG, R. A1 ; XU, B2 ; JIN, P2 ; WANG, Z. G2
[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, United Kingdom
[2] Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO. Box 912, Beijing 100083, China
Source

Optics letters. 2008, Vol 33, Num 11, pp 1210-1212, 3 p ; ref : 17 ref

CODEN
OPLEDP
ISSN
0146-9592
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Optical Society of America, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Diode superluminescente Diode électroluminescente Dispositif puits quantique Electroluminescence Optoélectronique Point quantique Recuit thermique Spectre émission 8560J
Keyword (en)
Superluminescent diodes Light emitting diode Quantum well devices Electroluminescence Optoelectronics Quantum dot Thermal annealing Emission spectrum
Keyword (es)
Diodo electroluminescente Electroluminiscencia Optoelectrónica Punto cuántico Recocido térmico Espectro emisión
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20460841

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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