A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium
- Author
- DAKE WU1 ; RU HUANG1 ; WEIHAI BU1 ; FALONG ZHOU1 ; YU TIAN1 ; BAOQIN CHEN2 ; CHUGUANG FENG3 ; MANSUN CHAN3 ; YANGYUAN WANG1
[1] Institute of Microelectronics, Peking University, Beijing 100871, China
[2] Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
[3] Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong-Kong - Source
Microelectronic engineering. 2008, Vol 85, Num 7, pp 1490-1494, 5 p ; ref : 10 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- H+ and He+ co-implantation SDOI SDOV UTB SOI
- Keyword (fr)
- Autoéchauffement Canal court Cavité dans réseau Comportement thermique Couche enterrée Couche mince Couche oxyde Endommagement Technologie MOS complémentaire Technologie autoalignée Technologie silicium sur isolant Transistor MOSFET
- Keyword (en)
- Self heating Short channel Void Thermal behavior Buried layer Thin film Oxide layer Damaging Complementary MOS technology Self aligned technology Silicon on insulator technology MOSFET
- Keyword (es)
- Autocalentamiento Canal corto Cavidad en red Comportamiento térmico Capa enterrada Capa fina Capa óxido Deterioración Tecnología MOS complementario Tecnología rejilla autoalineada Tecnología silicio sobre aislante
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20501972
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2008.01.079 
https://dx.doi.org/10.1016/j.mee.2008.01.079
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