Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs : Heterostructure microelectronics with TWHM 2007
- Author
- MATSUDA, Keita1 ; KAWASAKI, Takeshi1 ; NAKATA, Ken1 ; IGARASHI, Takeshi1 ; YAEGASSI, Seiji1
[1] Eudyna Devices Inc, Yokohama-shi, 244-0845, Japan - Source
IEICE transactions on electronics. 2008, Vol 91, Num 7, pp 1015-1019, 5 p ; ref : 9 ref
- ISSN
- 0916-8524
- Scientific domain
- Electronics
- Publisher
- Oxford University Press, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- AIGaN/GaN HEMT ITO Schottky gate gate leakage current tunnel
- Keyword (fr)
- Barrière Schottky Caractéristique courant tension Courant fuite Courant grille Défaut surface Dépendance température Dépôt sous vide Effet tunnel Etat interface Recuit Transistor mobilité électron élevée
- Keyword (en)
- Schottky barrier Voltage current curve Leakage current Gate current Surface defect Temperature dependence Vacuum deposition Tunnel effect Interface state Annealing High electron mobility transistor
- Keyword (es)
- Barrera Schottky Característica corriente tensión Corriente escape Corriente rejilla Defecto superficie Depósito bajo vacío Efecto túnel Estado interfase Recocido Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20502697
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1093/ietele/e91-c.7.1015 
https://dx.doi.org/10.1093/ietele/e91-c.7.1015
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