Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique
- Author
- PAWLIK, D1 ; SIEG, S1 ; KURINEC, S. K1 ; ROMMEL, S. L1 ; CHENG, Z2 ; PARK, J.-S2 ; HYDRICK, J2 ; LOCHTEFELD, A2
[1] Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623, United States
[2] Amberwave Systetms Corporation, Salem, NH 03079-4235, United States - Source
Electronics Letters. 2008, Vol 44, Num 15, pp 930-932, 3 p ; ref : 15 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Densité courant Diode jonction Diode tunnel Dislocation Dopage Désadaptation Rapport aspect Semiconducteur type n Semiconducteur type p
- Keyword (en)
- Current density Junction diodes Tunnel diode Dislocation Doping Mismatching Aspect ratio n type semiconductor p type semiconductor
- Keyword (es)
- Densidad corriente Diodo túnel Dislocación Doping Desadaptación Relación dimensional Semiconductor tipo n Semiconductor tipo p
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20512761
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:20081284 
https://dx.doi.org/10.1049/el:20081284
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