AlGaN/GaN MOS-HEMT With HfO2 Dielectric and Al2O3 Interfacial Passivation Layer Grown by Atomic Layer Deposition
- Author
- YUANZHENG YUE1 ; YUE HAO1 ; JINCHENG ZHANG1 ; JINYU NI1 ; WEI MAO1 ; QIAN FENG1 ; LINJIE LIU1
[1] Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China - Source
IEEE electron device letters. 2008, Vol 29, Num 8, pp 838-840, 3 p ; ref : 15 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Al2O3 and HfO2 atomic layer deposition (ALD) interfacial passivation layer (IPL) metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) stack gate
- Keyword (fr)
- Couche interfaciale Courant drain Courant fuite Courant grille Effet surface Fréquence coupure Méthode couche atomique Passivation Seuil tension Transconductance Transistor mobilité électron élevée
- Keyword (en)
- Interfacial layer Drain current Leakage current Gate current Surface effect Cut off frequency Atomic layer method Passivation Voltage threshold Transconductance High electron mobility transistor
- Keyword (es)
- Capa interfacial Corriente dren Corriente escape Corriente rejilla Efecto superficie Frecuencia corte Método capa atómica Pasivación Umbral tensión Transconductancia Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20531803
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2008.2000949 
https://dx.doi.org/10.1109/LED.2008.2000949
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