Modelling of Cu thin film growth by MOCVD process in a vertical reactor
- Author
- WON YOUNG CHUNG1 ; DO HYUN KIM1 ; YOUNG SANG CHO2
[1] Department of Chemical Engineering and Process Analysis Laboratory, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea, Republic of
[2] Chemical Process Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Korea, Republic of - Conference title
- Modelling in crystal growth
- Conference name
- International Workshop on Modelling in Crystal Growth (2 ; Durbuy 1996-10-13)
- Author (monograph)
- DUPRET, F (Editor)1 ; DERBY, J. J (Editor)2 ; KAKIMOTO, K (Editor)3 ; MüLLER, G4 ; VAN DEN BOGAERT, N (Editor)1 ; WHEELER, A. A (Editor)5
[1] Université catholique de Louvain, Belgium
[2] University of Minnesota, United States
[3] Kyushu University, Japan
[4] Universität Erlangen, Germany
[5] University of Bristol, United Kingdom - Source
Journal of crystal growth. 1997, Vol 180, Num 3-4, pp 691-697 ; ref : 17 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Champ température Champ écoulement Cinétique Couche mince Croissance cristalline en phase vapeur Cuivre Distribution concentration Mode opératoire Méthode Galerkin Petrov Méthode MOCVD Méthode élément fini Simulation numérique Transfert masse Cu Métal transition
- Keyword (en)
- Temperature distribution Flow pattern Kinetics Thin films Crystal growth from vapors Copper Concentration distribution Operating mode Galerkin-Petrov method MOCVD Finite element method Digital simulation Mass transfer Transition elements
- Keyword (es)
- Distribución concentración Método operatorio
- Keyword (de)
- Konzentrationsverteilung Verfahrensausfuehrung
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pacs
- 8110A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Discipline
- Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2053597
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(97)00312-6 
https://dx.doi.org/10.1016/S0022-0248(97)00312-6
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