Advanced cyclopentadienyl precursors for atomic layer deposition of ZrO₂ thin films

Author

NIINISTO, Jaakko¹ ; KUKLI, Kaupo^{1 2} ; RITALA, Mikko¹ ; LESKELÄ, Markku¹ ; TAMM, Aile² ; PUTKONEN, Matti³ ; DEZELAH, Charles L⁴ ; NIINISTÖ, Lauri⁵ ; JUN LU⁶ ; FUQUAN SONG⁷ ; WILLIAMS, Paul⁷ ; HEYS, Peter N⁷
[1] Department of Chemistry, University of Helsinki, University of Helsinki P.O. Box 55, 00014, Finland
[2] University of Tartu, Institute of Experimental Physics and Technology, Tähe 4, 51010 Tartu, Estonia
[3] Beneq OY, Ensimmäinen savu, 01510 Vantaa, Finland
[4] Picosun USA, LLC, 719 Griswold Street, Suite 820, Detroit, Michigan, 48226, United States
[5] Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015 Espoo, Finland
[6] Ångstrom Microstructure Laboratory, Department of Engineering Sciences, Uppsala University, Box 534, 75121 Uppsala, Sweden
[7] SAFC Hitech, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, United Kingdom

Source

Journal of material chemistry. 2008, Vol 18, Num 28, pp 3385-3390, 6 p ; ref : 33 ref

ISSN

0959-9428

Scientific domain

Chemistry

Publisher

Royal Society of Chemistry, Cambridge

Publication country

United Kingdom

Document type

Article

Language

English

Keyword (fr)

Couche mince Croissance cristalline en phase vapeur Disruption Décomposition thermique Dépendance température Dépôt phase vapeur Epaisseur couche Mécanisme croissance Méthode ALE Méthode couche atomique Oxyde de zirconium Phase métastable Polycristal Précurseur Rapport aspect Réseau cubique Structure lamellaire Traitement matériau Vitesse dépôt 6855A 6855J 8115K Substrat silicium ZrO2

Keyword (en)

Thin films Crystal growth from vapors Breakdown Thermal decomposition Temperature dependence Vapor deposition Layer thickness Growth mechanism Atomic layer epitaxial growth Atomic layer method Zirconium oxide Metastable phases Polycrystals Precursor Aspect ratio Cubic lattices Lamellar structure Material processing Deposition rate

Keyword (es)

Descomposición térmica Espesor capa Mecanismo crecimiento Método capa atómica Zirconio óxido Estructura lamelar Tratamiento material Velocidad deposición

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Discipline

Physics and materials science Physics of condensed state : structure, mechanical and thermal properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

20538577

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS