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The Study of mask structure for 45nm node based on manufacturability and lithographic performance

Author
JONG GUL DOH1 ; CHEOL HONG PARK1 ; HAN KU CHO1 ; YONG SEUNG MOON1 ; BO HYE KIM1 ; SUNG WON KWON1 ; SUN YOUNG CHOI1 ; SUNG HYUCK KIM1 ; SEONG YOON KIM1 ; BYUNG GOOK KIM1 ; SANG GYUN WOO1
[1] Photomask team, Samsung electronics. Co. Ltd., San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do, 445-701, Korea, Republic of
Conference title
Photomask and next-generation lithography mask technology XIV (17-19 April 2007, Yokohama, Japan)
Conference name
Photomask and next-generation lithography mask technology. Conference (Yokohama 2007)
Author (monograph)
Watanabe, Hidehiro (Editor)
Photomask Japan, Japan (Organiser of meeting)
BACUS, Technical group (Organiser of meeting)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66071U.1-66071U.7 ; ref : 3 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
978-0-8194-6745-4
Scientific domain
Electronics; Optics; Physics
Publisher
SPIE, Bellingham, Wash
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Densité optique Evaluation performance Fabrication microélectronique Largeur raie Lithographie Masque déphasage Miniaturisation Pastille électronique Photolithographie Photorésist
Keyword (en)
Optical density Performance evaluation Microelectronic fabrication Line width Lithography Phase shifting masks Miniaturization Wafer Photolithography Photoresist
Keyword (es)
Densidad óptica Evaluación prestación Fabricación microeléctrica Anchura raya espectral Litografía Miniaturización Pastilla electrónica Fotolitografía Fotorresistencia
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20546169

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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