Reduction of resist heating effect by writing order optimization, part II
- Author
- GOTO, Kazuya1 ; WATAKABE, Kazutaka1 ; KOMAGATA, Tadashi2 ; NAKAGAWA, Yasutoshi1
[1] Semiconductor Equipment Division, JEOL Ltd. 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan
[2] JEOL USA, Inc. 11 Dearborn Road, Peabody, MA 01960, United States - Conference title
- Photomask and next-generation lithography mask technology XIV (17-19 April 2007, Yokohama, Japan)
- Conference name
- Photomask and next-generation lithography mask technology. Conference (Yokohama 2007)
- Author (monograph)
- Watanabe, Hidehiro (Editor)
Photomask Japan, Japan (Organiser of meeting)
BACUS, Technical group (Organiser of meeting)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 660721.1-660721.8 ; ref : 5 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-6745-4
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Densité courant Ecriture faisceau électronique Fabrication microélectronique Optimisation Résist amplification chimique Taille critique
- Keyword (en)
- Current density Electron beam writing Microelectronic fabrication Optimization Chemically amplified resist Critical size
- Keyword (es)
- Densidad corriente Escritura haz electrónico Fabricación microeléctrica Optimización Resistencia amplificación química
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20546175
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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