A rigorous theoretical analysis for an In0.53Ga0.47As/InP single photon avalanche photodiode under Geiger mode operation
- Author
- PENG ZHOU1 ; ZHENGJUN WEI2 ; CHANGJUN LIAO2 ; CHUNFEI LI1 ; SHUQIONG YUAN2
[1] Department of Physics, Harbin Institute of Technology, Harbin 150001, China
[2] Lab of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China - Source
Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 15 ; 155101.1-155101.5 ; ref : 21 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Champ faible Dispositif optoélectronique Effet tunnel Ionisation champ Ionisation choc Matériau absorbant Photodiode avalanche
- Keyword (en)
- Low field Optoelectronic device Tunnel effect Field ionization Impact ionization Absorbent material Avalanche photodiodes
- Keyword (es)
- Campo débil Dispositivo optoelectrónico Efecto túnel Ionización campo Ionización choque Material absorbente
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20546838
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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