Amorphous layer coating induced brittle to ductile transition in single crystalline SiC nanowires : an atomistic simulation
- Author
- ZHIGUO WANG1 ; XIAOTAO ZU1 ; ZHIJIE LI1 ; FEI GAO2
[1] Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
[2] Pacific Northwest National Laboratory, PO Box 999, Richland, WA 99352, United States - Source
Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 15 ; 155419.1-155419.4 ; ref : 36 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Carbure de silicium Essai traction Etat amorphe Liaison disponible Module Young Modèle atomistique Méthode dynamique moléculaire Nanofil Plasticité Potentiel interatomique Relation contrainte déformation Revêtement Semiconducteur Transition fragile ductile SiC
- Keyword (en)
- Silicon carbide Tensile tests Amorphous state Dangling bonds Young modulus Atomistic model Molecular dynamics method Nanowires Plasticity Interatomic potential Stress-strain relations Coatings Semiconductor materials Brittle-ductile transitions
- Keyword (es)
- Silicio carburo Modelo atomistico Potencial interatómico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B25 Mechanical properties of nanoscale materials
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20546896
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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