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Amorphous layer coating induced brittle to ductile transition in single crystalline SiC nanowires : an atomistic simulation

Author
ZHIGUO WANG1 ; XIAOTAO ZU1 ; ZHIJIE LI1 ; FEI GAO2
[1] Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
[2] Pacific Northwest National Laboratory, PO Box 999, Richland, WA 99352, United States
Source

Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 15 ; 155419.1-155419.4 ; ref : 36 ref

CODEN
JPAPBE
ISSN
0022-3727
Scientific domain
Condensed state physics; Physics; Plasma physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Carbure de silicium Essai traction Etat amorphe Liaison disponible Module Young Modèle atomistique Méthode dynamique moléculaire Nanofil Plasticité Potentiel interatomique Relation contrainte déformation Revêtement Semiconducteur Transition fragile ductile SiC
Keyword (en)
Silicon carbide Tensile tests Amorphous state Dangling bonds Young modulus Atomistic model Molecular dynamics method Nanowires Plasticity Interatomic potential Stress-strain relations Coatings Semiconductor materials Brittle-ductile transitions
Keyword (es)
Silicio carburo Modelo atomistico Potencial interatómico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B25 Mechanical properties of nanoscale materials

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20546896

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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