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Advanced tungsten plug process for beyond nanometer technology

Author
LUOH, Tuung1 ; SU, Chin-Ta1 ; YANG, Ta-Hung1 ; CHEN, Kuang-Chao1 ; LU, Chih-Yuan1
[1] Technology Development Center, Macronix International Co. Ltd., No. 16, Li-Hsin Road, Science-Based Industrial Park, Hsinchu, Taiwan, Province of China
Source

Microelectronic engineering. 2008, Vol 85, Num 8, pp 1739-1747, 9 p ; ref : 21 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Tungsten plug;Atomic layer deposition;High aspect ratio;Contact size;Tungsten nucleation layer;Resistivity;Grain size
Keyword (fr)
Caractéristique électrique Conditions opératoires Croissance grain Damasquinage Dépôt chimique phase vapeur Fabrication microélectronique Grosseur grain Microscopie électronique transmission Méthode MOCVD Méthode couche atomique Nucléation Polissage mécanochimique Résistance contact Résistance électrique
Keyword (en)
Electrical characteristic Process conditions Grain growth Damascene process Chemical vapor deposition Microelectronic fabrication Grain size Transmission electron microscopy MOCVD Atomic layer method Nucleation Chemical mechanical polishing Contact resistance Resistor
Keyword (es)
Característica eléctrica Condiciones operatorias Crecimiento grano Damasquinado Depósito químico fase vapor Fabricación microeléctrica Grosor grano Microscopía electrónica transmisión Método capa atómica Nucleación Resistencia contacto Resistencia eléctrica(componente)
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20560924

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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