Modification of the Anomalous V-shaped and S-shaped Temperature Dependent Photon Energy in Al_xGa_1-xN (0<x≤0.38) Nanoheterostructures Using a Nonbonding Laser Lift-off (NBLLO) Technique

Author

ELGAWADI, Amal¹ ; KRASINSKI, Jerzy¹ ; GAINER, Gordon² ; DMITRIEV, Vladimir²
[1] School of Electrical and Computer Engineering, Oklahoma State University, 202 Engineering South, Stillwater, Oklahoma 74078-5032, United States
[2] Technologies and Devices International, Inc., 12214 Plum Orchard Dr, Silver Spring MD 20904, United States

Conference title

Gallium nitride materials and devices III (21-24 January 2008, San Jose, California, USA)

Conference name

Gallium nitride materials and devices. Conference (3 ; San Jose CA 2008)

Author (monograph)

Morkoç, Hadis (Editor)
SPIE, United States (Organiser of meeting)

Source

Proceedings of SPIE, the International Society for Optical Engineering. 2008 ; 1Vol, pp 689421.1-689421.11 ; ref : 36 ref

CODEN

PSISDG

ISSN

0277-786X

ISBN

978-0-8194-7069-0

Scientific domain

Crystallography; Electronics; Optics; Physics

Publisher

SPIE, Bellingham, Wash

Publication country

United States

Document type

Conference Paper

Language

English

Keyword (fr)

Composé III-V Décollement épitaxique Dépendance température Dépendance énergie Désadaptation Effet température Forme en S Photoluminescence Transition optique AlGaN

Keyword (en)

III-V compound Lift off Temperature dependence Energy dependence Mismatching Temperature effect S shape Photoluminescence Optical transition

Keyword (es)

Compuesto III-V Desprendimiento epitáxico Desadaptación Efecto temperatura Forma de una S Fotoluminiscencia Transición óptica

Classification

Pascal

001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline

Electronics

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

20565971

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS