MOCVD growth and annealing characteristics of Mg-doped AlGaN films
- Author
- YAO, J1 ; HAN, P1 ; ZHENG, Y. D1 ; XIE, Z. L1 ; LIU, B1 ; ZHANG, R1 ; JIANG, R. L1 ; LIU, Q. J1 ; XU, F1 ; GONG, H. M2 ; SHI, Y1
[1] Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing, 210093, China
[2] Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200080, China - Conference title
- Sixth International Conference on Thin Film Physics and Applications (25-28 September 2007, Shanghai, China)
- Conference name
- International Conference on Thin Film Physics and Applications (6 ; Shanghai 2007)
- Author (monograph)
- Shen, Wenzhong (Editor); Chu, Junhao (Editor)
Shanghai jiao tong da xue, Department of Physics, China (Organiser of meeting)
Society of photo-optical instrumentation engineers, China (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2008 ; 1Vol, pp 69842N.1-69842N.4 ; ref : 8 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-7182-6
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium Nitrure Couche mince Dopage Etude expérimentale Mécanisme croissance Méthode MOCVD Recuit 0130C 6855A 68 8115G Al Ga N AlGaN
- Keyword (en)
- Aluminium Nitrides Thin films Doping Experimental study Growth mechanism MOCVD Annealing
- Keyword (es)
- Doping Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00A Communication, education, history, and philosophy / 001B00A30 Physics literature and publications / 001B00A30C Conference proceedings
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20566388
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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