Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(100) substrate
- Author
- GAMBARYAN, K. M1 ; AROUTIOUNIAN, V. M1 ; BOECK, T2 ; SCHULZE, M2 ; SOUKIASSIAN, P3 4
[1] Department of Physics of Semiconductors and Microelectronics, Yerevan State University, A Manoukian Str. 1, Yerevan, 375025, Armenia
[2] Institute for Crystal Growth (IKZ), Max Born Str. 2, Berlin, 12489, Germany
[3] Commissariat à l'Energie Atomique, Saclay, Laboratoire SIMA, DSM-IRAMIS-SPCSI, Bât 462, 91191 Gif sur Yvette, France
[4] Département de Physique, Université Paris-Sud, 91405 Orsay, France - Source
Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 16 ; 162004.1-162004.5 ; ref : 33 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Accommodation réseau Arséniure d'indium Autoorganisation Couche autoassemblée Dimension Epitaxie phase liquide Indium Arsénioantimoniure Indium Phosphoarséniure Microscopie force atomique Microscopie électronique balayage Microstructure Point quantique Spectrométrie dispersive InAsSbP
- Keyword (en)
- Mismatch lattice Indium arsenides Self organization Self-assembled layers Dimensions LPE Indium Antimonides arsenides Indium Arsenides phosphides Atomic force microscopy Scanning electron microscopy Microstructure Quantum dots Dispersive spectrometry
- Keyword (es)
- Acomodación red Autoorganización Antimoniuro arseniuro Fosfoarseniuro Espectrometría dispersiva
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20580247
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0022-3727/41/16/162004 
https://dx.doi.org/10.1088/0022-3727/41/16/162004
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