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Small SiGe quantum dots obtained by excimer laser annealing

Author
GENQUAN HAN1 ; YUGANG ZENG1 ; YAN LIU1 ; JINZHONG YU1 ; BUWEN CHENG1 ; HAITAO YANG2
[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
[2] Tsinghua-Foxconn Nanotechnology Research Center, Physics Department, Tsinghua University, China
Source

Journal of crystal growth. 2008, Vol 310, Num 16, pp 3746-3751, 6 p ; ref : 22 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
68.35.Fx 68.35.Md 68.37.Ps 68.65.Hb A1. Atomic force microscopy A1. Diffusion B1. Germanium silicon alloys
Keyword (fr)
Alliage Ge Si Couche mince Diffusion superficielle Effet rayonnement Energie surface Germanium alliage Laser excimère Microscopie force atomique Nanomatériau Point quantique Potentiel chimique Potentiel surface Recuit Silicium alliage Synthèse nanomatériau 8107T 8116 Ge Si Si0.77Ge0.33 SiGe
Keyword (en)
Ge-Si alloys Thin films Surface diffusion Radiation effects Surface energy Germanium alloys Excimer lasers Atomic force microscopy Nanostructured materials Quantum dots Chemical potential Surface potential Annealing Silicon alloys Nanomaterial synthesis
Keyword (es)
Síntesis nanomaterial
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20589294

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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